Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2010-04-01
2010-12-28
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S103000, C257SE33034
Reexamination Certificate
active
07858963
ABSTRACT:
In the nitride based semiconductor optical device LE1, the strained well layers21extend along a reference plane SR1tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. The tilt angle α is in the range of greater than 59 degrees to less than 80 degrees or greater than 150 degrees to less than 180 degrees. A gallium nitride based semiconductor layer P is adjacent to a light-emitting layer SP− with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer W3is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer P is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer SP− and the gallium nitride based semiconductor layer P.
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Akita Katsushi
Enya Yohei
Kyono Takashi
Nakamura Takao
Sumitomo Takamichi
Sartori Michael A.
Schwarz Steven J.
Sumitomo Electric Industries Ltd.
Tran Minh-Loan T
Venable LLP
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