Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-05-17
2009-08-04
Everhart, Caridad M (Department: 2895)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Combined with the removal of material by nonchemical means
C438S752000, C257S615000, C257SE21220, C257SE33028
Reexamination Certificate
active
07569493
ABSTRACT:
There is provided a cleaning method and production method that suppresses the adhesion of foreign matters including impurity, fine particles and the like on a surface of a compound semiconductor. A method of cleaning a nitride-based compound semiconductor in accordance with the present invention includes the steps of: preparing a nitride-based compound semiconductor (or a substrate preparation step); and cleaning. In the step of cleaning, a cleaning liquid having a pH of 7.1 or higher is used to clean the nitride-based compound semiconductor.
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Hachigo Akihiro
Nishiura Takayuki
Everhart Caridad M
McDermott Will & Emery LLP
Sumitomo Electric Industries Ltd.
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