Nitridation process with peripheral region protection

Details Nitridation process with peripheral region protection Nitridation process with peripheral region protection

1995-08-25

1998-11-10

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438769, H01L 218247

Patent

active

058343512

ABSTRACT:
A process is provided for fabricating an integrated circuit in which an oxynitride layer is selectively formed in a first active region without forming an oxynitride layer in a second active region peripheral to the first active region. In one embodiment, the memory cell is fabricated where an oxynitride layer is prevented from forming in a region peripheral to the memory array region. In an alternate embodiment, the memory cell is fabricated where an oxynitride layer formed in a region peripheral to the memory array region is selectively removed.

REFERENCES:
patent: 5158902 (1992-10-01), Hanada
patent: 5254489 (1993-10-01), Nakata
Ghandhi, "VLSI Fabrication Principles," Silicon and Gallium Arsenide pp. 495-496, 1983.
J. Kim, A.B. Joshi, G.W. Yoon and D.L. Kwong, "Effects of Residual Surface Nitrogen on the Dielectric Breakdown Characteristics of Regrown Oxides", Proc. of Symp. on VLSI-TSA, p. 100, 1993.
A. Battacharyya, C. Vorst and A.H. Carim, "A Two-Step Oxidation Process to Improve the Electrical Breakdown Properties of Thin Oxides", J. Eletrochem. Soc., vol. 132, No. 8, p. 1900, 1985.
J.C. Chen, S. Holland and C. Hu, "Electrical Breakdown in Thin Gate and Tunnelling Oxides", IEEE Trans. Electron Devices, vol. ED-32, p. 413, 1985 .

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