Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2011-03-22
2011-03-22
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S079000, C257S081000, C257S744000, C257S745000
Reexamination Certificate
active
07910945
ABSTRACT:
A light emitting diode structure is disclosed that includes a light emitting active portion formed of epitaxial layers and carrier substrate supporting the active portion. A bonding metal system that predominates in nickel and tin joins the active portion to the carrier substrate. At least one titanium adhesion layer is between the active portion and the carrier substrate and a platinum barrier layer is between the nickel-tin bonding system and the titanium adhesion layer. The platinum layer has a thickness sufficient to substantially prevent tin in the nickel tin bonding system from migrating into or through the titanium adhesion layer.
REFERENCES:
patent: 3648357 (1972-03-01), Green, Jr.
patent: 4418857 (1983-12-01), Ainslie et al.
patent: 5197654 (1993-03-01), Katz et al.
patent: 5234153 (1993-08-01), Bacon et al.
patent: 6250541 (2001-06-01), Shangguan et al.
patent: 6335263 (2002-01-01), Cheung et al.
patent: 6527881 (2003-03-01), Kanematsu et al.
patent: 6744142 (2004-06-01), Lie et al.
patent: 6930389 (2005-08-01), Huang
patent: 7023089 (2006-04-01), Lu
patent: 2001/0004534 (2001-06-01), Carter-Coman et al.
patent: 2002/0030198 (2002-03-01), Coman et al.
patent: 2002/0045330 (2002-04-01), Angst et al.
patent: 2004/0201029 (2004-10-01), Yamane et al.
patent: 2004/0232439 (2004-11-01), Gibb et al.
patent: 2005/0072835 (2005-04-01), Choi et al.
patent: 2006/0049411 (2006-03-01), Nakamura et al.
patent: 2006/0060872 (2006-03-01), Edmond et al.
patent: 2006/0060874 (2006-03-01), Edmond et al.
patent: 2006/0060877 (2006-03-01), Edmond et al.
patent: 2006/0060879 (2006-03-01), Edmond
patent: 2006/0061974 (2006-03-01), Soga et al.
patent: 2006/0128118 (2006-06-01), Nagahama et al.
patent: 2006/0163590 (2006-07-01), Erchak et al.
patent: 2006/0189098 (2006-08-01), Edmond
patent: 2007/0141806 (2007-06-01), Uemura et al.
patent: 2008/0003777 (2008-01-01), Slater et al.
patent: 234648 (1925-06-01), None
patent: 2006-140186 (2006-06-01), None
Neumann et al., “The Ternary System Au-Ni-Sn”, 1996, Journal of Solid State Chemistry 123, p. 203-207.
Hsu et al., “Phase equilibria of the Sn-Ag-Ni ternary system and interfacial reactions at the Sn-Ag/Ni joints”, 2004, Acta Materialia 52, p. 2541-2547.
International Search Report of foreign counterpart application No. PCT/US2008/072855; mailing date Dec. 3, 2008; 3 pages.
Lee, et al, “Study of Ni as a barrier metal in AuSn soldering application for laser chip/submount assembly,” J. Appl. Phys. vol. 72 No. 8, Oct. 15, 1992, pp. 3808-3815.
Labie et al, “Solid state diffusion in Cu-Sn and Ni-Sn diffusion couples with flip-chip dimensions,” Intermetallics 15 (Sep. 26, 2006) 396-403.
Correspondence dated Jul. 8, 2010 from Japanese associate forwarding office action Japanese Patent Application No. 2007-171846, 3 pages.
Search Report corresponding to ROC(Taiwan) Patent Application No. 096123546.
Donofrio Matthew
Edmond John A.
Kong Hua-Shuang
Slater, Jr. David B.
Cree Inc.
Jung Michael
Myers Bigel & Sibley & Sajovec
Richards N Drew
LandOfFree
Nickel tin bonding system with barrier layer for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nickel tin bonding system with barrier layer for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nickel tin bonding system with barrier layer for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2621235