Nickel silicide including indium and a method of manufacture...

Details Nickel silicide including indium and a method of manufacture... Nickel silicide including indium and a method of manufacture...

2007-05-01

2007-05-01

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S721000, C438S583000, C438S649000, C438S651000, C257SE21008, C257S006000, C257S296000, C257S593000

Reexamination Certificate

active

11096660

ABSTRACT:
The present invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a substrate (110), as well as a nickel silicide region (170) located over the substrate (110), the nickel silicide region (170) having an amount of indium located therein.

REFERENCES:
patent: 5960270 (1999-09-01), Misra et al.
patent: 6033537 (2000-03-01), Suguro
patent: 6713391 (2004-03-01), Yi et al.
patent: 7045444 (2006-05-01), Yamazaki et al.

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