Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-04-08
2008-04-08
Nhu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S382000, C257S758000, C257S759000, C257SE21060, C257SE21296, C257SE21593
Reexamination Certificate
active
07355255
ABSTRACT:
The present invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a substrate (110), as well as a nickel silicide region (170) located over the substrate (110), the nickel silicide region (170) having an amount of indium located therein.
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patent: 2005/0269640 (2005-12-01), Shimamoto et al.
Bonifield Thomas D.
Chen Peijun J.
Crank Sue E.
Jain Amitabh
Mogul Homi C.
Brady III W. James
Nhu David
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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