Nickel silicide including indium and a method of manufacture...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S382000, C257S758000, C257S759000, C257SE21060, C257SE21296, C257SE21593

Reexamination Certificate

active

07355255

ABSTRACT:
The present invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a substrate (110), as well as a nickel silicide region (170) located over the substrate (110), the nickel silicide region (170) having an amount of indium located therein.

REFERENCES:
patent: 5960270 (1999-09-01), Misra et al.
patent: 6033537 (2000-03-01), Suguro
patent: 6713391 (2004-03-01), Yi et al.
patent: 7045444 (2006-05-01), Yamazaki et al.
patent: 7211516 (2007-05-01), Chen et al.
patent: 2005/0269640 (2005-12-01), Shimamoto et al.

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