Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-03-18
2008-03-18
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S583000, C438S649000, C438S651000, C438S721000, C257SE21060, C257SE21296, C257SE21593
Reexamination Certificate
active
11551374
ABSTRACT:
The invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a gate structure located over a substrate, the gate structure including a gate dielectric layer and gate electrode layer. The semiconductor device may further include source/drain regions located in/over the substrate and adjacent the gate structure, and a nickel alloy silicide located in the source/drain regions, the nickel alloy silicide having an amount of indium located therein.
REFERENCES:
patent: 5960270 (1999-09-01), Misra et al.
patent: 6033537 (2000-03-01), Suguro
patent: 6713391 (2004-03-01), Yi et al.
patent: 7045444 (2006-05-01), Yamazaki et al.
patent: 7211516 (2007-05-01), Chen et al.
patent: 2006/0223295 (2006-10-01), Chen et al.
patent: 2007/0141840 (2007-06-01), Chen et al.
Bonifield Thomas D.
Chen Peijun J.
Crank Sue
Jain Amitabh
Mogul Homi
Brady III W. James
Nhu David
LandOfFree
Nickel alloy silicide including indium and a method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nickel alloy silicide including indium and a method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nickel alloy silicide including indium and a method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3908031