Nickel alloy silicide including indium and a method of...

Details Nickel alloy silicide including indium and a method of... Nickel alloy silicide including indium and a method of...

2008-03-18

2008-03-18

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S583000, C438S649000, C438S651000, C438S721000, C257SE21060, C257SE21296, C257SE21593

Reexamination Certificate

active

07344985

ABSTRACT:
The invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a gate structure located over a substrate, the gate structure including a gate dielectric layer and gate electrode layer. The semiconductor device may further include source/drain regions located in/over the substrate and adjacent the gate structure, and a nickel alloy silicide located in the source/drain regions, the nickel alloy silicide having an amount of indium located therein.

REFERENCES:
patent: 5960270 (1999-09-01), Misra et al.
patent: 6033537 (2000-03-01), Suguro
patent: 6713391 (2004-03-01), Yi et al.
patent: 7045444 (2006-05-01), Yamazaki et al.
patent: 7211516 (2007-05-01), Chen et al.
patent: 2006/0223295 (2006-10-01), Chen et al.
patent: 2007/0141840 (2007-06-01), Chen et al.

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