NFET and PFET devices and methods of fabricating same

Details NFET and PFET devices and methods of fabricating same NFET and PFET devices and methods of fabricating same

2008-05-20

2008-05-20

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S763000, C257SE21403

Reexamination Certificate

active

07374988

ABSTRACT:
A field effect transistor and method of fabricating the field effect transistor. The field effect transistor, including: a gate electrode formed on a top surface of a gate dielectric layer, the gate dielectric layer on a top surface of a single-crystal silicon channel region, the single-crystal silicon channel region on a top surface of a Ge including layer, the Ge including layer on a top surface of a single-crystal silicon substrate, the Ge including layer between a first dielectric layer and a second dielectric layer on the top surface of the single-crystal silicon substrate.

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