Negative-type resist sensitive to ionizing radiation

Details Negative-type resist sensitive to ionizing radiation Negative-type resist sensitive to ionizing radiation

1985-07-22

1987-03-10

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430313, 430325, 430331, 430270, 430296, 430942, 430945, 430966, 156646, 156643, G03C 516, G03F 726

Patent

active

046490990

ABSTRACT:
An acetalized polyvinyl alcohol having a molecular weight of 10,000 to 1,000,000 represented by the formula ##STR1## wherein: R.sup.1 represents a residue of an aldehyde or a ketone the residue having no photosenitivity to ultraviolet rays; R.sup.2 represents a hydrogen atom, which may partially be substituted with an acetyl group; R.sup.3 represents naught or a monomeric unit copolymerizable with vinyl acetate; and l, m, n, are integers indicating polymerization degrees, has excellent characteristics such as high sensitivity, high resolving power and excellent dry etching resistance and is suitable as a negative-type resist in ionizing radiation lithography.

REFERENCES:
C. T. Hu, "Photoresist Mask for Sputter Etching", IBM Technical Disclosure Bulletin, vol. 21, No. 3, Aug. 1978, p. 1199.
Glycol-Ethers, Union Carbide Corporation, Chemical Division, 270 Park Avenue, New York, N.Y., 12 pages.

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