Negative ion deductive source for etching high aspect ratio stru

Details Negative ion deductive source for etching high aspect ratio stru Negative ion deductive source for etching high aspect ratio stru

1996-02-05

1998-07-21

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

156345, 20429837, 438732, 438729, H05H 100

Patent

active

057831025

ABSTRACT:
A method of manufacturing semiconductor chips uses negative plasma etching. The plasma may be produced by an inductive plasma source. A magnetic field is used to reduce diffusion of hot electrons, producing a uniform negative plasma to etch a work piece.

REFERENCES:
patent: 4158589 (1979-06-01), Keller et al.
patent: 4987346 (1991-01-01), Katzschner et al.
patent: 5030885 (1991-07-01), Holmes
patent: 5133825 (1992-07-01), Hakamata et al.
patent: 5133826 (1992-07-01), Dandl
patent: 5225024 (1993-07-01), Hanley et al.
patent: 5242538 (1993-09-01), Hamrah et al.
patent: 5279669 (1994-01-01), Lee
patent: 5292370 (1994-03-01), Tsai et al.
patent: 5444207 (1995-08-01), Sekine et al.
patent: 5556501 (1996-09-01), Collins et al.

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