Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-06-28
2005-06-28
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S159000, C365S187000, C365S189110
Reexamination Certificate
active
06912151
ABSTRACT:
A memory device (such as an SRAM) using negative differential resistance (NDR) elements is disclosed. Body effect performances for NDR FETs (and other FETs) that may be used in such device are enhanced by floating a body of some/all the NDR FETs. Various embodiments using common or separate wells for such elements are illustrated to achieve superior body effect performance results, including a silicon-on-insulator (SOI) implementation.
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Bever Hoffman & Harms LLP
Dinh Son T.
Harms Jeanette S.
Nguyen Tuan T.
Synopsys Inc.
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