Negative bias critical dimension trim

Details Negative bias critical dimension trim Negative bias critical dimension trim

2006-09-11

2009-06-09

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

C438S587000, C430S030000, C257SE21027, C257SE21039, C257SE21360

Reexamination Certificate

active

07544521

ABSTRACT:
A method of trimming the critical dimension of an isolated line to a greater extent than a dense line is provided. A mask is formed of an organic material over the etch layer wherein the mask has at least a first region with a first pattern density and a second region with a second pattern density. A surface area of the organic material in the first region is measured. A surface area of the organic material in the second region is measured. A reverse bias trim of the mask is provided, wherein a ratio of a trim rate of the organic material in the first region to a trim rate of the organic material in the second region is related to a ratio of the measured surface area of the organic material in the first region to the measured surface area of the organic material in the second region.

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