Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1995-07-28
1999-08-17
Dang, Thi
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
216 58, 438706, 438710, 156345, H05H 100
Patent
active
059389435
ABSTRACT:
A near substrate reactant homogenization apparatus reduces the excess reactive species in a region at or near the edge of a substrate surface to provide a uniform reactant concentration over the substrate, thereby improving etch rate uniformity over the substrate. The near substrate reactant homogenization apparatus has a substantially planar surface that is parallel to said substrate surface and that extends beyond the substrate edge, at or below the substrate surface. In a first preferred embodiment of the invention, the temperature of the gas absorber area is changed to promote recombination or condensation of excess reactive species at the substrate edge, where the excess species are removed. In another, equally preferred embodiment of the invention, the gas absorber area is formed of a porous material having a large surface area. Excess reactive species enter the porous structure and are subsequently recombined. In a third equally preferred embodiment of the invention, a gas curtain of a laminar inert or reactive gas may also be used along the substrate surface perimeter, either alone or in conjunction with the first or second embodiments of the invention, to form a diffusive barrier that suppresses the flux of excess reactive species at the substrate's edge.
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Amini Zahra H.
Campbell Robert B.
Jarecki, Jr. Robert L.
Tipton Gary D.
Applied Materials Inc.
Dang Thi
Glenn Michael A.
Sgarbossa Peter J.
Wilson James C.
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