Near-field exposure method

Details Near-field exposure method Near-field exposure method

2011-04-12

2011-04-12

Duda, Kathleen (Department: 1722)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S005000

Reexamination Certificate

active

07923201

ABSTRACT:
A near-field exposure method in which an exposure mask having a light blocking film with an opening smaller than a wavelength of light from an exposure light source is used, and an object is exposed by near-field light produced at the opening of the exposure mask based on the exposure light from the exposure light source. A width of the opening is determined to satisfy equations (1), (2) and (3) below, wherein the width of the opening of the exposure mask is denoted by s (nm), a processing pitch of the object to be exposed is denoted by p (nm) and coefficients are denoted by a and b:in-line-formulae description="In-line Formulae" end="lead"?s=ap−b  (1)in-line-formulae description="In-line Formulae" end="tail"?in-line-formulae description="In-line Formulae" end="lead"?0.46≦a≦0.58  (2)in-line-formulae description="In-line Formulae" end="tail"?in-line-formulae description="In-line Formulae" end="lead"?3≦b≦13  (3)in-line-formulae description="In-line Formulae" end="tail"?The exposure mask having the opening with the determined width is provided, and the exposure light is projected to the exposure mask to thereby expose the object to be exposed.

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Toshiki Ito, et al., “Fabrication of Half-Pitch 32 nm Resist Patterns Using Near-Field Lithography with a-Si Mask,” Applied Physics Letters, Jul. 2006, vol. 89, pp. 033113-1-033113-3.

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