Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-05-03
2011-05-03
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S157000, C438S284000, C257SE21635
Reexamination Certificate
active
07935599
ABSTRACT:
A method is provided for removing reentrant stringers in the fabrication of a nanowire transistor (NWT). The method provides a cylindrical nanostructure with an outside surface axis overlying a substrate surface. The nanostructure includes an insulated semiconductor core. A conductive film is conformally deposited overlying the nanostructure, to function as a gate strap or a combination gate and gate strap. A hard mask insulator is deposited overlying the conductive film and selected regions of the hard mask are anisotropically plasma etched. As a result, a conductive film gate electrode is formed substantially surrounding a cylindrical section of nanostructure. Inadvertently, conductive film reentrant stringers may be formed adjacent the nanostructure outside surface axis, made from the conductive film. The method etches, and so removes the conductive film reentrant stringers.
REFERENCES:
patent: 6331720 (2001-12-01), Parekh et al.
patent: 6664196 (2003-12-01), Wada et al.
patent: 7029959 (2006-04-01), Yang et al.
patent: 2004/0166642 (2004-08-01), Chen et al.
patent: 2006/0046483 (2006-03-01), Abatchev et al.
patent: 2006/0172497 (2006-08-01), Hareland et al.
Singh et al., High-Performance Fully Depleted Silicon Nanowire (Diameter < 5nm) Gate-All-Around CMOS Devices, IEEE Electron Device Letters, vol. 27, No. 5, May 2006, pp. 383.
Crowder Mark A.
Takafuji Yutaka
Landau Matthew C
Law Office of Gerald Maliszewski
Luke Daniel
Maliszewski Gerald
Sharp Laboratories of America Inc.
LandOfFree
Nanowire transistor and method for forming same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nanowire transistor and method for forming same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nanowire transistor and method for forming same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2663498