Nanowire memory device and method of manufacturing the same

Details Nanowire memory device and method of manufacturing the same Nanowire memory device and method of manufacturing the same

2007-03-07

2010-10-26

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Molecular or atomic

C257SE51039, C977S943000

Reexamination Certificate

active

07821813

ABSTRACT:
A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first electrode to overlap the first electrode; and a second nanowire extending from an end of the second electrode corresponding to the end of the first electrode in the same direction as the first nanowire, wherein an insulating layer exists between the first and second electrodes.

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patent: 2007/0037414 (2007-02-01), Yamauchi et al.
patent: 2007/0231988 (2007-10-01), Yoo et al.

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