Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-13
2007-11-13
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S298000, C257S300000, C257S312000, C257SE51038, C257SE23074, C257SE23165, C257SE51040
Reexamination Certificate
active
10811373
ABSTRACT:
Nanotube on gate FET structures and applications of such, including n2crossbars requiring only 2n control lines. A non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and a channel region of a second semiconductor type of material disposed between the source and drain region. A gate structure is made of at least one of semiconductive or conductive material and is disposed over an insulator over the channel region. A control gate is made of at least one of semiconductive or conductive material. An electromechanically-deflectable nanotube switching element is in fixed contact with one of the gate structure and the control gate structure and is not in fixed contact with the other of the gate structure and the control gate structure. The device has a network of inherent capacitances, including an inherent capacitance of an undeflected nanotube switching element in relation to the gate structure. The network is such that the nanotube switching element is deflectable into contact with the other of the gate structure and the control gate structure in response to signals being applied to the control gate and one of the source region and drain region. Certain embodiments of the device have an area of about 4 F2. Other embodiments include a release line is positioned in spaced relation to the nanotube switching element, and having a horizontal orientation that is parallel to the orientation of the source and drain diffusions. Other embodiments provide an n2crossbar array having n2non-volatile transistor devices, but require only 2n control lines.
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Bertin Claude L.
Brock Darren K.
Jaiprakash Venkatachalam C.
Rueckes Thomas
Segal Brent M.
Nantero Inc.
Purvis Sue A.
Rodela Eduardo A.
Wilmer Cutler Pickering Hale and Dorr LLP
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