Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-08
2010-12-14
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S201000, C438S257000, C438S761000, C438S763000, C257S202000, C257S239000, C257S288000, C257S315000, C257S316000, C977S742000, C977S841000, C977S938000
Reexamination Certificate
active
07851294
ABSTRACT:
A method for manufacturing a nanotube non-volatile memory cell is proposed. The method includes the steps of: forming a source electrode and a drain electrode, forming a nanotube implementing a conduction channel between the source electrode and the drain electrode, forming an insulated floating gate for storing electric charges by passivating conductive nanoparticles with passivation molecules and arranging a disposition of passivated conductive nanoparticles on the nanotube, the conductive nanoparticles being adapted to store the electric charges and being insulated by the passivation molecules from the nanotube, and forming a control gate coupled with the channel.
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Basco Andrea
Bevilacqua Maria Fortuna
Casuscelli Valeria
Volpe Maria Viviana
Garcia Joannie A
Graybeal Jackson LLP
Jablonski Kevin D.
Jorgenson Lisa K.
Richards N Drew
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