Nanostructure-based package interconnect

Details Nanostructure-based package interconnect Nanostructure-based package interconnect

2008-05-13

2008-05-13

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE51040, C257SE21287, C257SE21291, C977S700000, C977S712000, C977S762000

Reexamination Certificate

active

11315532

ABSTRACT:
An embodiment of the present invention is an interconnect technique. A nanostructure bump is formed on a die. The nanostructure bump has a template defining nano-sized openings and metallic nano-wires extending from the nano-sized openings. The die is attached to a substrate via the nanostructure bump.

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