Nanoporous silica dielectric films modified by electron beam exp

Details Nanoporous silica dielectric films modified by electron beam exp Nanoporous silica dielectric films modified by electron beam exp

1999-01-08

2000-03-28

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

4302711, G03F 709

Patent

active

060429941

ABSTRACT:
Nanoporous silica dielectric films are modified by electron beam exposure after an optional hydrophobic treatment by an organic reactant. After formation of the film onto a substrate, the substrate is placed inside a large area electron beam exposure system. The resulting films are characterized by having a low dielectric constant and low water or silanol content compared to thermally cured films. Also, e-beam cured films have higher mechanical strength and better resistance to chemical solvents and oxygen plasmas compared to thermally cured films.

REFERENCES:
patent: 5468595 (1995-11-01), Livesay
patent: 5609925 (1997-03-01), Camilletti et al.
patent: 5710187 (1998-01-01), Steckle, Jr. et al.
patent: 5805424 (1998-09-01), Purinton

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