Nanoelectromechanical transistors and methods of forming same

Details Nanoelectromechanical transistors and methods of forming same Nanoelectromechanical transistors and methods of forming same

2007-07-11

2009-06-23

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S292000, C438S775000, C257SE21170, C257SE21218, C257SE21267, C257SE21304, C257SE21547

Reexamination Certificate

active

07550354

ABSTRACT:
Nanoelectromechanical transistors (NEMTs) and methods of forming the same are disclosed. In one embodiment, an NEMT may include a substrate including a gate, a source region and a drain region; an electromechanically deflectable nanotube member; and a channel member electrically insulatively coupled to the nanotube member so as to be aligned with the source region and the drain region, wherein the electromechanical deflection of the nanotube member is controllable, in response to an electrical potential applied to the gate and the nanotube member, between an off state and an on state, the on state placing the channel member in electrical connection with the source region and the drain region to form a current path.

REFERENCES:
patent: 6348295 (2002-02-01), Griffith et al.
patent: 6472705 (2002-10-01), Bethune et al.
patent: 6574130 (2003-06-01), Segal et al.
patent: 6643165 (2003-11-01), Segal et al.
patent: 6664027 (2003-12-01), Griffith et al.
patent: 6706402 (2004-03-01), Rueckes et al.
patent: 6750471 (2004-06-01), Bethune et al.
patent: 6784028 (2004-08-01), Rueckes et al.
patent: 6803260 (2004-10-01), Shin et al.
patent: 6835591 (2004-12-01), Rueckes et al.
patent: 6836424 (2004-12-01), Brock et al.
patent: 6887450 (2005-05-01), Chen et al.
patent: 6911682 (2005-06-01), Rueckes et al.
patent: 6919592 (2005-07-01), Segal et al.
patent: 6924538 (2005-08-01), Jaiprakash et al.
patent: 6942921 (2005-09-01), Rueckes et al.
patent: 6944054 (2005-09-01), Rueckes et al.
patent: 6962839 (2005-11-01), Wei et al.
patent: 6979590 (2005-12-01), Rueckes et al.
patent: 6982903 (2006-01-01), Bertin et al.
patent: 6990009 (2006-01-01), Bertin et al.
patent: 6995046 (2006-02-01), Rueckes et al.
patent: 7115901 (2006-10-01), Bertin et al.
patent: 7115960 (2006-10-01), Bertin et al.
patent: 2002/0175408 (2002-11-01), Majumdar et al.
patent: 2004/0144972 (2004-07-01), Dai et al.
patent: 2005/0035786 (2005-02-01), Bertin et al.
patent: 2005/0035787 (2005-02-01), Bertin et al.
patent: 2005/0104085 (2005-05-01), Pinkerton et al.
patent: 2005/0179339 (2005-08-01), Pinkerton et al.
patent: 2005/0270824 (2005-12-01), Bertin et al.
patent: 2005/0282515 (2005-12-01), Bertin
patent: 2006/0061389 (2006-03-01), Bertin
patent: 2006/0193093 (2006-08-01), Bertin et al.
Rueckes et al., “Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing,” www.sciencemag.org, vol. 289, Jul. 7, 2000, pp. 94-97.
Ward et al., “A Non-Volatile Nanoelectromechanical Memory Element Utilizing a Fabric of Carbon Nanotubes,” IEEE, 2004, pp. 34-38.
Abele et al., “Suspended-Gate MOSFET: bringing new MEMS functionality into solid-state MOS transistor,” IEEE, 2005, pp. 1-3.
Kam et al., “A New Nano-Electro-Mechanical Field Effect Transistor (NEMFET) Design for Low-Power Electronics,” IEEE, 2005, pp. 1-4.
Jang et al., “Nanoelectromechanical DRAM for ultra-large-scale integration (ULSI),” IEEE, 2005, pp. 1-4.

Affiliated with

Also associated with

Rating

Nanoelectromechanical transistors and methods of forming same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nanoelectromechanical transistors and methods of forming same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nanoelectromechanical transistors and methods of forming same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4148094