Nanocrystal memory with differential energy bands and method...

Details Nanocrystal memory with differential energy bands and method... Nanocrystal memory with differential energy bands and method...

2011-01-18

2011-01-18

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S260000, C438S398000, C438S593000, C257SE21422

Reexamination Certificate

active

07871886

ABSTRACT:
A method of making a semiconductor device using a semiconductor substrate includes forming a first insulating layer having a first band energy over the semiconductor substrate. A first semiconductor layer having a second band energy is formed on the first insulating layer. The first semiconductor layer is annealed to form a plurality of first charge retainer globules from the first semiconductor layer. A first protective film is formed over each charge retainer globule of the plurality of first charge retainer globules. A second semiconductor layer is formed having a third band energy over the plurality of first charge retainer globules. The second semiconductor layer is annealed to form a plurality of storage globules from the second semiconductor layer over the plurality of first charge retainer globules. A magnitude of the second band energy is between a magnitude of the first band energy and a magnitude of the third band energy.

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