Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-04
2009-02-17
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S381000, C257SE21245, C257SE21267, C257SE21304, C257SE21314, C257SE21645
Reexamination Certificate
active
07491600
ABSTRACT:
A method for making a multibit non-volatile memory cell structure is provided herein. In accordance with the method, a semiconductor substrate (101) is provided, and first and second sets of memory stacks (103, 105, 107, and109) are formed on the substrate, each memory stack including a control gate (111) and a layer of memory material (113). A source/drain region (123) is then formed between the first and second sets of memory stacks, and a silicide layer (125) is formed over the source/drain region.
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Chindalore Gowrishankar L.
Ingersoll Paul A.
Prinz Erwin J.
Fortkort John A.
Fortkort & Houston P.C.
Freescale Semiconductor Inc.
Nhu David
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