Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-10-07
1999-08-10
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438962, 438261, 438264, H01C 218247
Patent
active
059372958
ABSTRACT:
A memory device and memory incorporating a plurality of the memory devices is described wherein each memory device has spaced apart source and drain regions, a channel, a barrier insulating layer, a nanocrystal or a plurality of nanocrystals, a control barrier layer, and a gate electrode. The nanocrystal which may be a quantum dot, stores one electron or hole or a discrete number of electrons or holes at room temperature to provide threshold voltage shifts in excess of the thermal voltage for each change in electron or hole stored. The invention utilizes Coulomb blockade in electrostatically coupling one or more stored electrons or holes to a channel while avoiding in-path Coulomb-blockade controlled conduction for sensing the stored charge.
REFERENCES:
patent: 5354707 (1994-10-01), Chapple-Sokol et al.
patent: 5670790 (1997-09-01), Katch et al.
Leobandung, et al., Single hole quantum dot transistor in silicon, Appl. Phys. Lett. 67 (16) 2338-40, Oct. 16, 1995.
Tiwari et al. Volatile and Non-Volatile Memories in Silicon with Nano-Crystal Storage, IEEE, Int'l Electron Device Mtg. 95-521, 1995.
Leobandung et al, Observation of quantum effects and Coulomb blockade in silicon quantum-dot transistors at temperatures over 100 K, Appl. Phys. Lett 67 (7) 938-40, Aug. 14, 1995.
Chen Wei
Smith, III Theoren Perlee
Tiwari Sandip
Hack Jonathan
International Business Machines - Corporation
Niebling John F.
Trepp Robert M.
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