Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-12-09
2000-08-22
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438780, 438781, 438958, 4272556, 427489, 427490, H01L 214763
Patent
active
061071846
ABSTRACT:
A method and apparatus for forming thin copolymer layers having low dielectric constants on semiconductor substrates includes in situ formation of p-xylylenes, or derivatives thereof, from solid or liquid precursors such as cyclic p-xylylene dimer, p-xylene, 1,4-bis(formatomethyl)benzene, or 1,4-bis(N-methyl-aminomethyl)benzene. P-xylylene is copolymerized with a comonomer having labile groups that are converted to dispersed gas bubbles after the copolymer layer is deposited on the substrate. Preferred comonomers comprise diazocyclopentadienyl, diazoquinoyl, formyloxy, or glyoxyloyloxy groups.
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Cheung David
Lang Chi-I
Lee Peter Wai-Man
Mandal Robert P.
Applied Materials Inc.
Nguyen Ha Tran
Niebling John F.
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