Nano-elastic memory device and method of manufacturing the same

Semiconductor device manufacturing: process – Making point contact device

Reexamination Certificate

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C438S637000, C438S666000, C977S742000, C977S842000

Reexamination Certificate

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07816175

ABSTRACT:
A nano-elastic memory device and a method of manufacturing the same. The nano-elastic memory device may include a substrate, a plurality of lower electrodes arranged in parallel on the substrate, a support unit formed of an insulating material to a desired or predetermined thickness on the substrate having cavities that expose the lower electrodes, a nano-elastic body extending perpendicular from a surface of the lower electrodes in the cavities, and a plurality of upper electrodes formed on the support unit and perpendicularly crossing the lower electrodes over the nano-elastic bodies.

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