Semiconductor device manufacturing: process – Making point contact device
Reexamination Certificate
2008-10-22
2010-10-19
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Making point contact device
C438S637000, C438S666000, C977S742000, C977S842000
Reexamination Certificate
active
07816175
ABSTRACT:
A nano-elastic memory device and a method of manufacturing the same. The nano-elastic memory device may include a substrate, a plurality of lower electrodes arranged in parallel on the substrate, a support unit formed of an insulating material to a desired or predetermined thickness on the substrate having cavities that expose the lower electrodes, a nano-elastic body extending perpendicular from a surface of the lower electrodes in the cavities, and a plurality of upper electrodes formed on the support unit and perpendicularly crossing the lower electrodes over the nano-elastic bodies.
REFERENCES:
patent: 6129901 (2000-10-01), Moskovits et al.
patent: 6558645 (2003-05-01), Nakayama et al.
patent: 6566704 (2003-05-01), Choi et al.
patent: 6574130 (2003-06-01), Segal et al.
patent: 6616497 (2003-09-01), Choi et al.
patent: 6856002 (2005-02-01), Moore et al.
patent: 7147533 (2006-12-01), Kawate et al.
patent: 7268077 (2007-09-01), Hwang
patent: 7274035 (2007-09-01), Yang et al.
patent: 7335528 (2008-02-01), Rueckes et al.
patent: 7374793 (2008-05-01), Furukawa et al.
patent: 7687981 (2010-03-01), Parsapour
patent: 2005/0017370 (2005-01-01), Stasiak
Cha Young-kwan
Chang Joo-han
Kang Dong-hun
Park Wan-jun
Harness & Dickey & Pierce P.L.C.
Picardat Kevin M
Samsung Electronics Co,. Ltd.
LandOfFree
Nano-elastic memory device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nano-elastic memory device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nano-elastic memory device and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4153998