Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-12
2009-12-01
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S777000, C257SE27026
Reexamination Certificate
active
07626228
ABSTRACT:
A NAND-type nonvolatile memory device includes a semiconductor substrate and a first ground selection line and a first string selection line disposed on the substrate in parallel to each other. A plurality of parallel first word lines are interposed on the substrate between the first ground selection line and the first string selection line. A first impurity-doped region is formed in the semiconductor substrate adjacent to the first word lines, the first ground selection line, and the first string selection line. A first interlayer dielectric layer is disposed on the first ground selection line, the first string selection line, the plurality of first word lines, and the semiconductor substrate. An epitaxial contact plug contacts the semiconductor substrate through the first interlayer dielectric layer. A single crystalline semiconductor layer is disposed on the first interlayer dielectric layer that contacts the epitaxial contact plug. A plurality of parallel second word lines is disposed on the single crystalline semiconductor layer. A second impurity-doped region formed in the single crystalline semiconductor layer adjacent to the second word lines. A second interlayer dielectric layer is disposed on the plurality of second word lines and the single crystalline semiconductor layer.
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Jung Soon-Moon
Kim Ki-Nam
Park Jae-Kwan
Hu Shouxiang
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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