Nand type non-volatile memory device

Details Nand type non-volatile memory device Nand type non-volatile memory device

1996-02-21

1998-05-12

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257391, 257403, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

057510458

ABSTRACT:
In a NAND type non-volatile memory device, an ion-implanting region is formed only in the source/drain region (or only in the drain region) of a depletion-type transistor for string selection, so that its junction depth is greater than that of the other transistors, to thereby improve the current-driving capability of each memory element.

REFERENCES:
patent: 4889820 (1989-12-01), Mori
patent: 5081052 (1992-01-01), Kobayashi et al.
patent: 5245207 (1993-09-01), Mikoshiba et al.
patent: 5600171 (1997-02-01), Makihara et al.
patent: 5610092 (1997-03-01), Tasaka

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