NAND stack ROM

Static information storage and retrieval – Read/write circuit – Precharge

Patent

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Details

365104, G11C 700, G11C 1700

Patent

active

049808613

ABSTRACT:
Faster access time is achieved in a NAND stack ROM by eliminating depletion mode decode transistors, thus reducing column capacitance. Horizontal ground straps of diffusion are eliminated to reduce chip area by running virtual ground lines vertically through the array. Adjacent columns are tied to alternating sense amplifiers utilizing a simple multiplexer connected to the virtual ground lines.

REFERENCES:
patent: 4636664 (1987-01-01), Craycraft et al.

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