NAND flash memory devices having 3-dimensionally arranged...

Details NAND flash memory devices having 3-dimensionally arranged... NAND flash memory devices having 3-dimensionally arranged...

2007-01-17

2009-10-13

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000, C257S724000, C257S777000, C257SE27026

Reexamination Certificate

active

07602028

ABSTRACT:
A NAND flash memory device includes a lower semiconductor layer and an upper semiconductor layer located over the lower semiconductor layer, a first drain region and a first source region located in the lower semiconductor layer, and a second drain region and a second source region located in the upper semiconductor layer. A first gate structure is located on the lower semiconductor layer, and a second gate structure is located on the upper semiconductor layer. A bit line is located over the upper semiconductor layer, and at least one bit line plug is connected between the bit line and the first drain region, where the at least one bit line plug extends through a drain throughhole located in the upper semiconductor layer.

REFERENCES:
patent: 5321286 (1994-06-01), Koyama et al.
patent: 6300683 (2001-10-01), Nagasaka et al.
patent: 2004/0125629 (2004-07-01), Scheuerlein et al.
patent: 2005/0263830 (2005-12-01), Wang et al.
patent: 2006/0049449 (2006-03-01), Iino et al.
patent: 10-2004-0058990 (2004-07-01), None
patent: 10-2005-0010260 (2005-01-01), None
patent: 10-2005-0079233 (2005-08-01), None
patent: 1020060057821 (2006-05-01), None

Affiliated with

Also associated with

Rating

NAND flash memory devices having 3-dimensionally arranged... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with NAND flash memory devices having 3-dimensionally arranged..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and NAND flash memory devices having 3-dimensionally arranged... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4139632