Nand flash memory devices and methods of fabricating the same

Details Nand flash memory devices and methods of fabricating the same Nand flash memory devices and methods of fabricating the same

2006-08-24

2008-08-12

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S300000, C257SE27103, C438S257000

Reexamination Certificate

active

07411239

ABSTRACT:
A NAND includes a device isolation pattern disposed in a region of a substrate defining a plurality of active regions. Memory transistors having memory gate patterns, constituting a cell string, cross the plurality of active regions. Select transistors are disposed over the memory transistors, and lower plugs are disposed on each side of the cell string to electrically connect the plurality of active regions on both sides of the cell string and the select transistors.

REFERENCES:
patent: 7233522 (2007-06-01), Chen et al.
patent: 2006/0018181 (2006-01-01), Matsunaga et al.
patent: 05-167080 (1993-07-01), None
patent: 11-145431 (1999-05-01), None
patent: 2001-308209 (2001-11-01), None

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