NAND flash memory cell row and manufacturing method thereof

Details NAND flash memory cell row and manufacturing method thereof NAND flash memory cell row and manufacturing method thereof

2007-08-28

2007-08-28

Hoang, Quoc (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S266000, C257S315000, C257SE21179, C257SE21422

Reexamination Certificate

active

11163818

ABSTRACT:
A NAND flash memory cell row includes first and second stacked gate structures, control and floating gates, inter-gate dielectric layer, a tunnel oxide layer, doping regions and source/drain regions. The first stacked gate structures has an erase gate dielectric layer, an erase gate and a first cap layer. Each of the second stacked gate structure has a select gate dielectric layer, a select gate and a second cap layer. The control gate is between each of the first stacked gate structures, and between each of the second stacked gate structures and the adjacent first stacked gate structure. The floating gate is between the control gate and substrate. The inter-gate dielectric layer is disposed between the control and floating gates. The tunnel oxide is between the floating gate and substrate. The doping regions are disposed under the first stacked gate structure, and the source/drain regions are in the exposed substrate.

REFERENCES:
patent: 6916708 (2005-07-01), Tao et al.

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