Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-02-18
1998-01-27
Tsai, Jey
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438279, 438210, H01L 2170
Patent
active
057122008
ABSTRACT:
A resistor formed in a well adjacent to a transistor serves as a ballast resistor for the transistor. The transistor is formed in a first region on a substrate. The first region is of a first conductivity type. A well of second conductivity type is formed adjacent to the first region. A gate region is formed over a portion of the first region. Concurrently, a covering is formed over a first area of the well. The covering and the gate region are comprised of the same material. Source/drain regions of the second conductivity type are formed on either side of the gate region. The source/drain regions are of the first conductivity type. A first source/drain region extends into the well. Concurrent to the forming of the source drain regions, a doped region is formed within the well. The doped region and the first source/drain region have the same doping density. The doped region is physically separated from the first source/drain region by the first area of the well. Contact regions for the transistor are formed within the second source/drain region and within the doped region.
REFERENCES:
patent: 5595925 (1997-01-01), Chen et al.
patent: 5597765 (1997-01-01), Yilmaz et al.
patent: 5641699 (1997-06-01), Hirase et al.
patent: 5646060 (1997-07-01), Chang et al.
Chang Joni Y.
Tsai Jey
VLSI Technology Inc.
Weller Douglas L.
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