N-type transistor, production methods for n-type transistor...

Details N-type transistor, production methods for n-type transistor... N-type transistor, production methods for n-type transistor...

2011-03-08

2011-03-08

Arora, Ajay K (Department: 2892)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S744000, C257SE21108, C257SE29070, C257S024000

Reexamination Certificate

active

07902089

ABSTRACT:
An object of the present invention is to provide a new n-type transistor, different from the prior art, using a channel having a nanotube-shaped structure, and having n-type semiconductive properties. To realize this, a film of a nitrogenous compound6is formed directly on a channel5of a transistor1comprising a source electrode2, a drain electrode3, a gate electrode4and the n-type channel5having a nanotube-shaped structure and provided between the source electrode2and the drain electrode3.

REFERENCES:
patent: 5308999 (1994-05-01), Gotou
patent: 2002/0012937 (2002-01-01), Tender et al.
patent: 2002/0016084 (2002-02-01), Todd
patent: 2004/0238887 (2004-12-01), Nihey
patent: 2003 17508 (2003-01-01), None
patent: 2004 64059 (2004-02-01), None
Wind, et al., “Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes”, Applied Physics Letters, vol. 80, No. 20, pp. 3817-3819, 2002.
Heinze, et al., “Carbon Nanotubes as Schottky Barrier Transistors”, Physical Review Letters, vol. 89, No. 10, 2002.
Derycke, et al., “Controlling doping and carrier injection in carbon nanotube transistors”, Applied Physics Letters, vol. 80, No. 15, pp. 2773-2775, 2002.
Kong, et al., “Full and Modulated Chemical Gating of Individual Carbon Nanotubes by Organic Amine Compounds”, Journal of Physical Chemistry B105, pp. 2890-2893, 2001.
Lu, et al., “Polymer Electrolyte-Gated Carbon Nanotube Field-Effect Transistor”, Nano letters, vol. 4, No. 4, pp. 623-627, 2004.
Bachtold, et al., “Logic Circuits with Carbon Nanotube Transistors”, Science, vol. 294, pp. 1317-1320, 2001.
Javey, et al., “High-k dielectrics for advanced carbon-nanotube transistors and logic gates”, Nature Materials, vol. 1, pp. 241-246, 2002.

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