N-type HIGFET and method

Details N-type HIGFET and method N-type HIGFET and method

1995-06-02

1996-05-07

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257364, 257401, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

055148913

ABSTRACT:
An N-type HIGFET (10) utilizes two etch layers (17,18) to form a gate insulator (16) to be shorter that the gate electrode (21). This T-shaped gate structure facilitates forming source (23) and drain (24) regions that are separated from the gate insulator (16) by a distance (22) in order to reduce leakage current and increase the breakdown voltage.

REFERENCES:
patent: 5373178 (1994-12-01), Motoyoshi et al.

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