N-type carbon nanotube field effect transistor and method of...

Details N-type carbon nanotube field effect transistor and method of... N-type carbon nanotube field effect transistor and method of...

2008-06-03

2008-06-03

Lewis, Monica (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257SE51040

Reexamination Certificate

active

07381983

ABSTRACT:
Provided are an n-type carbon nanotube field effect transistor (CNT FET) and a method of fabricating the n-type CNT FET. The n-type CNT FET may include a substrate; electrodes formed on the substrate and separated from each other; a CNT forrmed on the substrate and electrically connected to the electrodes; a gate oxide layer formed on the CNT; and a gate electrode formed on the gate oxide layer, wherein the gate oxide layer contains electron donor atoms which donate electrons to the CNT such that the CNT may be n-doped by the electron donor atoms.

REFERENCES:
patent: 6723624 (2004-04-01), Wang et al.
patent: 7115916 (2006-10-01), Avouris et al.
patent: 7253434 (2007-08-01), Golovchenko et al.
patent: 2003/0122133 (2003-07-01), Choi et al.
patent: 2004/0023431 (2004-02-01), Wang et al.
patent: 02004083402 (2004-03-01), None
Singh et al., Frequency Response of Top-Gated Carbon Nanotube Field-Effect Transistors, 2004, IEEE Transactions on Nanotechnology, vol. 3, pp. 383-387.
Avouris et al., Carbon Nanotube Transistors and Logic Circuits, 2002, Physica B 323, pp. 6-14.
Korean Office Action (with English translation) dated Feb. 23, 2006.

Affiliated with

Also associated with

Rating

N-type carbon nanotube field effect transistor and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with N-type carbon nanotube field effect transistor and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and N-type carbon nanotube field effect transistor and method of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2813653