N.sub.2 O nitrided-oxide trench sidewalls and method of making i

Details N.sub.2 O nitrided-oxide trench sidewalls and method of making i N.sub.2 O nitrided-oxide trench sidewalls and method of making i

1996-12-31

1998-07-14

Fourson, George R.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438437, 438775, 148 333, H01L 2176

Patent

active

057803463

ABSTRACT:
A method of forming an isolation structure in a semiconductor substrate is described. A trench is first etched into a semiconductor substrate. A first oxide layer is then formed with the trench. The first oxide layer is subjected to a nitrogen-oxide gas ambient and is annealed to form an oxy-nitride surface on the first oxide layer and a silicon-oxynitride interface between the first oxide layer and the semiconductor substrate. A second oxide layer is then deposited over the oxy-nitride surface of the first oxide layer. The method and isolation structure of the present invention prevents dopant outdiffusion, reduces trench stresses, allows more uniform growth of thin gate oxides, and permits the use of thinner gate oxides.

REFERENCES:
patent: 3976524 (1976-08-01), Feng
patent: 4871689 (1989-10-01), Bergami et al.
patent: 4960727 (1990-10-01), Mattox
patent: 5004703 (1991-04-01), Zdebel et al.
patent: 5387540 (1995-02-01), Poon et al.

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