N -ary three-dimensional mask-programmable read-only memory

Details N -ary three-dimensional mask-programmable read-only memory N -ary three-dimensional mask-programmable read-only memory

2009-06-04

2010-10-26

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S211000, C257S368000, C257S401000, C341S056000

Reexamination Certificate

active

07821080

ABSTRACT:
N-ary three-dimensional mask-programmable read-only memory (N-3DMPROM) stores multi-bit-per-cell. Its memory cells can have N states (N>2) and data are stored as N-ary codes. N-3DMPROM has a larger storage density than the prior-art binary 3D-MPROM. One advantage of N-3DROM over other N-ary memory (e.g. multi-level-cell flash) is that its array efficiency can be kept high. N-3DMPROM could be geometry-defined, junction-defined, or a combination thereof.

REFERENCES:
patent: 4404655 (1983-09-01), Naiff
patent: 4424579 (1984-01-01), Roesner
patent: 4598386 (1986-07-01), Roesner
patent: 4603341 (1986-07-01), Bertin et al.
patent: 4796074 (1989-01-01), Roesner
patent: 5257224 (1993-10-01), Nojiri et al.
patent: 5272370 (1993-12-01), French
patent: 5455435 (1995-10-01), Fu et al.
patent: 5468983 (1995-11-01), Hirase et al.
patent: 5751012 (1998-05-01), Wolstenholme et al.
patent: 5825686 (1998-10-01), Schmitt-Landsiedel et al.
patent: 5835396 (1998-11-01), Zhang
patent: 5841150 (1998-11-01), Gonzalez et al.
patent: 5843824 (1998-12-01), Chou et al.
patent: 5847442 (1998-12-01), Mills, Jr. et al.
patent: 5854111 (1998-12-01), Wen
patent: 5904526 (1999-05-01), Wen et al.
patent: 5907778 (1999-05-01), Chou et al.
patent: 5943255 (1999-08-01), Kutter et al.
patent: 6015738 (2000-01-01), Levy et al.
patent: 6021079 (2000-02-01), Worley
patent: 6049481 (2000-04-01), Yamasaki
patent: 6221723 (2001-04-01), Kunitou
patent: 6385074 (2002-05-01), Johnson et al.
patent: 6420215 (2002-07-01), Knall et al.
patent: 6461906 (2002-10-01), Lung
patent: 6515888 (2003-02-01), Johnson et al.
patent: 6624485 (2003-09-01), Johnson
patent: 6646913 (2003-11-01), Micheloni et al.
patent: 6717222 (2004-04-01), Zhang
patent: 6794253 (2004-09-01), Lin et al.
patent: 6809948 (2004-10-01), Nachumovsky et al.
patent: 6816407 (2004-11-01), Rolandi
patent: 6821841 (2004-11-01), Wu et al.
patent: 6822898 (2004-11-01), Matsui
patent: 6853028 (2005-02-01), Kim et al.
patent: 7071849 (2006-07-01), Zhang
patent: 7167109 (2007-01-01), Hu et al.
patent: 7633128 (2009-12-01), Zhang
patent: 2005/0050434 (2005-03-01), Lunelli et al.
U.S. Appl. No. 11/162,262, filed Sep. 2, 2005, Zhang.
Micheloni et al. “The Flash Memory Read Path: Building Blocks and Critical Aspects”,Proceedings of the IEEE, pp. 537-551, Apr. 2003.

Affiliated with

Also associated with

Rating

N -ary three-dimensional mask-programmable read-only memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with N -ary three-dimensional mask-programmable read-only memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and N -ary three-dimensional mask-programmable read-only memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4229783