High voltage drive circuit employing capacitive signal...

Details High voltage drive circuit employing capacitive signal... High voltage drive circuit employing capacitive signal...

2008-06-27

2010-06-22

Berhane, Adolf (Department: 2838)

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

C257S500000

Reexamination Certificate

active

07741896

ABSTRACT:
According to one embodiment, there is provided a high voltage drive circuit comprising drive and sense electrodes formed substantially in a single plane. The device effects signal transfer between drive and receive circuits through the drive and sense electrodes by capacitive means, and permits high voltage devices, such as IGBTs, to be driven thereby without the use of high voltage transistors, thereby eliminating the need to use expensive fabrication processes such as SOI when manufacturing high voltage gate drive circuits and ICs. The device may be formed in a small package using, by way of example, using CMOS or other conventional low-cost semiconductor fabrication and packaging processes.

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