Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-02
2009-12-15
Wojciechowicz, Edward (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S211000, C257S368000, C257S401000, C341S056000
Reexamination Certificate
active
07633128
ABSTRACT:
The present invention discloses an N-ary mask-programmable memory (N-MPM). N-MPM cells can have N cell-states, with N>2. N-MPM cells could be geometry-defined, junction-defined, or both. Based on an nF-opening process (n≧1), partial-contacts with feature size <1F can be implemented with an nF-opening mask with feature size ≧1F. N can be a non-integral power of 2. In this case, each memory cell represents fractional bits.
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