Mushroom double stacked capacitor

Details Mushroom double stacked capacitor Mushroom double stacked capacitor

1991-01-02

1992-02-18

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Capacitors

365 51, 36518901, G11C 1124

Patent

active

050899864

ABSTRACT:
A mushroom double stacked capacitor (mushroom cell) using a modified stacked capacitor storage cell fabrication process. The mushroom cell is made up of polysilicon structure, having a mushroom extended V-shaped cross-section. The storage node plate of the mushroom cell is overlaid by polysilicon with a dielectric sandwiched in between and connects to an access device's active area via a buried contact. The plate extends to an adjacent storage node but is isolated from the adjacent node by less than the critical resolution dimension of a given lithographic technology. The shape of the polysilicon structure increases storage capability 200% or more without enlarging the surface area defined for a normal buried digit line stacked capacitor cell.

REFERENCES:
patent: 4896293 (1990-01-01), McElroy
"3-Dimensional Stacked Capacitor Cell for 16M and 64M DRAMs", by T. Ema et al., pp. 592-595.
"A Spread Stacked Capacitor (SSC) Cell for 64MBIT DRAMs", by S. Inoue et al., pp. 31-34, IEDM 89'.

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