Method for planarizing wafers

Details Method for planarizing wafers Method for planarizing wafers

1985-10-21

1987-06-09

Smith, John D.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

427 82, 427 88, 427240, 430329, H01L 21312

Patent

active

046720235

ABSTRACT:
A method for filling indentations to planarize the surface of a wafer is disclosed. The method includes three steps: (1) coating the wafer surface with a layer of positive photoresist that fills the indentations and covers the surface of the wafer; (2) exposing the layer of photoresist to light or other radiation source of such intensity and duration that the layer of photoresist is exposed down to the surface of the wafer but not into the indentations; and (3) removing the exposed portion of the photoresist by using a developer, resulting in a planarized wafer containing indentations filled with unexposed photoresist. Once the wafer has been planarized by this method, overstructures can be formed over the top of the photoresist filled indentations.

REFERENCES:
patent: 3976524 (1976-08-01), Feng
patent: 4025411 (1977-05-01), Hom-Ma
patent: 4379833 (1983-04-01), Canavello
patent: 4427713 (1984-01-01), White

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