Multiple step metallization process

Details Multiple step metallization process Multiple step metallization process

1989-09-29

1990-11-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437188, 437197, 437246, 437247, 148DIG25, H01L 2128

Patent

active

049701762

ABSTRACT:
Metal step coverage is improved by utilizing a multiple step metallization process. In the first step, a thick portion of a metal layer is deposited on a semiconductor wafer at a cold temperature. The remaining amount of metal is deposited in a second step as the temperature is ramped up to allow for reflow of the metal layer through grain growth, recrystallization and bulk diffusion. The thick portion of the metal layer deposited at the cold temperature is of adequate thickness so that it remains continuous at the higher temperature and enhances via filling.

REFERENCES:
patent: 4818723 (1989-04-01), Yen
patent: 4874719 (1989-10-01), Kurosawa
patent: 4897709 (1990-01-01), Yokoyama et al.

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