Multiple port resistive memory cell

Details Multiple port resistive memory cell Multiple port resistive memory cell

2008-07-22

2008-07-22

Hur, J. H. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S230050, C365S171000, C365S189040, C365S148000

Reexamination Certificate

active

11427253

ABSTRACT:
A resistive type memory system provides improved read access with multiple ports. The resistive type memory system includes a plurality of resistive type memory cells arranged in an array. Each of the resistive type memory cells has a corresponding first port and a corresponding second port. Each first port enables both read access and write access to the corresponding resistive type memory cell. Additionally, each second port enables read access to the corresponding MRAM cell. Furthermore, the memory system enables overlapping read or write access, with another read access.

REFERENCES:
patent: 5923593 (1999-07-01), Hsu et al.
patent: 6456524 (2002-09-01), Perner et al.
patent: 6609174 (2003-08-01), Naji
patent: 2003/0223283 (2003-12-01), Kunikiyo

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