Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface
Patent
1987-08-21
1989-08-22
Dees, Josee G.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Forming nonplanar surface
430312, 430328, 430394, G03C 500
Patent
active
048595730
ABSTRACT:
A process for selectively hardening a surface layer of a polymeric photoresist to make such surface layer opaque and insoluble in photoresist carrier solvents, where such selectivity is coextensive with the polymeric/monomeric pattern created in the photoresist. Representative hardening processes include controlled exposure to certain gas plasmas, ion bombardment, or irradiation by ultraviolet radiation of chosen wavelength range. The selectively hardened polymeric regions act as a barrier to the carrier solvent in which the polymer film is laid down and to the developer subsequently employed to remove the monomeric regions. The hardened polymeric regions further exhibit an actinic radiation barrier property preventing radiation depolymerization. In one form the process may be used in a two-layer photoresist structure, where the pinhole-covering thicker second layer is laid down and exposed before developing the monomeric regions of the thinner first layer. Thereafter, a single development operation serves to remove the monomeric regions of both layers. The actinic barrier prevents depolymerization of the monomeric regions of the first layer during the second exposure. In a second application of the selective conversion process, the actinic barrier property of the hardened surface is used to form a conformable mask on a thick, single planarizing layer of photoresist. According to this practice, the photoresist is first locally depolymerized to a fraction of its depth. After a hardening process the selectively hardened surface layer of the photoresist layer constitutes a barrier to actinic radiation. The succeeding flood illumination thereby extends the pattern formed as the monomeric region down to the substrate.
REFERENCES:
patent: 4068018 (1978-01-01), Hashimoto et al.
patent: 4241165 (1980-12-01), Hughes et al.
patent: 4253888 (1981-03-01), Kikuchi
patent: 4352870 (1982-10-01), Howard et al.
patent: 4394437 (1983-07-01), Bergendahl et al.
patent: 4454221 (1984-06-01), Chen et al.
patent: 4499177 (1985-02-01), Vollenbroek et al.
Thompson et al, Introduction to Microlithography, ACS Symposium Series 219, American Chemical Society, 1983, pp. 218-229.
Dobkin et al, "Plasma Formation of Buffer Layers . . . ", IEEE Electron Device Letters, vol. EDL-2(9) Sep. 1981, pp. 222-224.
Johnson et al, "Single Coat Photoresist Lift-off Structure," IBM Tech. Discl. Bull., vol. 19(3), Aug. 1976, p. 859.
Chiu et al, "Resist Lift-Off Mask with Controllable . . . ," IBM Tech. Dis. Bull., vol. 21(9), Feb. 1979, p. 3623.
E. Ong et al., "Multilayer Resists for Fine Line Optical Lithography", Solid State Technology, pp. 155-160, Jun. 1984.
Bassous et al., "Forming Resist Images by Portable Conformable Masking Technique", IBM Technical Disclosure Bulletin, vol. 25, No. 11B, Apr. 1983, pp. 5922-5924.
Lin, "Portable Intimately Contacted Mask", IBM Technical Disclosure Bulletin, vol. 21, No. 5, Oct. 1978, p. 2133.
Horng et al., "Superimposition of Photoresist Patterns", IBM Technical Disclosure Bulletin, vol. 26, No. 3B, Aug. 1983.
Chiu et al., "Resist Lift-Off Mask with Controllable Overhand Thickness", IBM Technical Disclosure Bulletin, vol. 21, No. 9, Feb. 1979, p. 3623.
Gardner et al., "Double-Resist Layer Shadow Masking", IBM Technical Disclosure Bulletin, vol. 19, No. 1, Jun. 1976, pp. 156-157.
Johnson et al., "Single Coat Photoresist Lift-Off Structure", IBM Technical Disclosure Bulletin, vol. 19, No. 3, Aug. 1976, p. 859.
Patents Abstracts of Japan, vol. 1, No. 18, Mar. 24, 1977, p. 413E76 and JP, A, 51-1114931 (Hitachi) Sep. 10, 1976. 2
Gulett Michael R.
Hayworth Hubert O.
Maheras George
Dees Josee G.
Hawk Jr. Wilbert
NCR Corporation
Salys Casimer K.
LandOfFree
Multiple photoresist layer process using selective hardening does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multiple photoresist layer process using selective hardening, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multiple photoresist layer process using selective hardening will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2417352