Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2011-05-10
2011-05-10
Elms, Richard (Department: 2824)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S148000, C977S754000
Reexamination Certificate
active
07940552
ABSTRACT:
A memory device comprises a plurality of memory cells, each memory cell comprising a memory cell material that has an initial resistance that is determined in response to an applied programming current in a programming operation, the resistance of the memory cell varying from the initial resistance over a time period following the programming operation, and each memory cell being connected to a conduction line of the memory device that is used to apply the programming current to program the resistance of the corresponding memory cell in the programming operation and that is used to apply a read current to read the resistance of the corresponding memory cell in a read operation. A modification circuit modifies the resistance of a memory cell of the plurality of memory cells selected for a read operation to return its resistance to near the initial resistance prior to a read operation of the memory cell.
REFERENCES:
patent: 5912839 (1999-06-01), Ovshinsky et al.
patent: 6503829 (2003-01-01), Kim et al.
patent: 6625054 (2003-09-01), Lowrey et al.
patent: 6813177 (2004-11-01), Lowrey et al.
patent: 6928022 (2005-08-01), Cho et al.
patent: 6967865 (2005-11-01), Lee
patent: 6982913 (2006-01-01), Oh et al.
patent: 7012834 (2006-03-01), Cho et al.
patent: 7027342 (2006-04-01), Inoue
patent: 7085154 (2006-08-01), Cho et al.
patent: 2004/0114419 (2004-06-01), Lowrey et al.
patent: 2004/0246804 (2004-12-01), Cho et al.
patent: 2004/0246808 (2004-12-01), Cho et al.
patent: 2005/0052904 (2005-03-01), Cho et al.
patent: 2005/0068804 (2005-03-01), Choi et al.
patent: 2005/0117388 (2005-06-01), Cho et al.
patent: 2005/0174841 (2005-08-01), Ho
patent: 2005/0276138 (2005-12-01), Inoue
patent: 2006/0011902 (2006-01-01), Song et al.
patent: 2006/0013058 (2006-01-01), Kang et al.
patent: 2006/0046509 (2006-03-01), Gwan-Hyeob
patent: 2006/0050548 (2006-03-01), Oh et al.
patent: 2006/0076548 (2006-04-01), Park et al.
patent: 2006/0092694 (2006-05-01), Choi et al.
patent: 2006/0118913 (2006-06-01), Yi et al.
patent: 2006/0120148 (2006-06-01), Kim et al.
patent: 2006/0138393 (2006-06-01), Seo et al.
patent: 2006/0152186 (2006-07-01), Suh et al.
patent: 2006/0180803 (2006-08-01), Suh et al.
patent: 2006/0180811 (2006-08-01), Lee et al.
patent: 2006/0181932 (2006-08-01), Cho et al.
patent: 2006/0186483 (2006-08-01), Cho et al.
patent: 2006/0192193 (2006-08-01), Lee et al.
patent: 2006/0226411 (2006-10-01), Lee
patent: 2006/0250885 (2006-11-01), Cho et al.
patent: 2006/0266993 (2006-11-01), Suh et al.
patent: 2007/0008774 (2007-01-01), Khang
patent: 2007/0012906 (2007-01-01), Kim et al.
patent: 2007/0018157 (2007-01-01), Hideki
patent: 2007/0020799 (2007-01-01), Choi et al.
patent: 2007/0029606 (2007-02-01), Noh et al.
patent: 2007/0030025 (2007-02-01), Lim et al.
patent: 2007/0051935 (2007-03-01), Lee et al.
patent: 2007/0054493 (2007-03-01), Nam
patent: 2007/0080384 (2007-04-01), Noh et al.
patent: 2007/0108433 (2007-05-01), Lee et al.
patent: 2007/0108488 (2007-05-01), Suh et al.
patent: 2007/0133270 (2007-06-01), Jeong et al.
patent: 2007/0148933 (2007-06-01), Lee et al.
patent: 2007/0152754 (2007-07-01), Khang et al.
patent: 2007/0153570 (2007-07-01), Suh et al.
patent: 2007/0160760 (2007-07-01), Shin et al.
patent: 2007/0170881 (2007-07-01), Noh et al.
patent: 2007/0184613 (2007-08-01), Kim et al.
patent: 2007/0185712 (2007-08-01), Jeong et al.
patent: 2007/0189065 (2007-08-01), Suh et al.
patent: 2007/0194294 (2007-08-01), Song et al.
patent: 2007/0200108 (2007-08-01), Noh et al.
patent: 2006-004480 (2006-01-01), None
patent: 2006-510153 (2006-03-01), None
patent: 10-2004-0075033 (2004-08-01), None
patent: 10-0642084 (2006-10-01), None
patent: 10-06474533 (2007-01-01), None
patent: WO 2004/055827 (2004-07-01), None
A. Pirovano, et al., “Low-Field Amorphous State Resistance and Threshold . . . ,” IEEE Transactions on Electron Devices, vol. 51, No. 5., pp. 714-719, May 2004.
D. Ielmini, et al., “Recovery and Drift Dynamics of Resistance . . . ,” IEEE Transactions on Electron Devices, vol. 54, No. 2, pp. 308-315, Feb. 2007.
A. Itri, et al., “Analysis of Phase-Transformation Dynamics and Estimation . . . ,” 42nd Annual International Reliability Physics Symposium, pp. 209-215, Phoenix, Arizona, 2004.
R. Street, et al., “States in the Gap in Glassy Semiconductors,” Physical Review Letters, vol. 35, No. 19, pp. 1293-1296, Nov. 10, 1975.
M. Kastner, et al., “Valence-Alternation Model for Localized Gap States in . . . ,” Physical Review Letters, vol. 37, No. 22, pp. 1504-1507, Nov. 29, 1976.
Chang-Wook Jeong
Jeong Gi-Tae
Kim Hyeong-Jun
Ko Seung-Pil
Byrne Harry W
Elms Richard
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
LandOfFree
Multiple level cell phase-change memory device having... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multiple level cell phase-change memory device having..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multiple level cell phase-change memory device having... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2643608