Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-06-14
2011-06-14
Chen, Jack (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S284000, C438S157000, C438S706000, C257SE21409
Reexamination Certificate
active
07960234
ABSTRACT:
One embodiment of the present invention relates to a method of fabricating a multi-gate transistor. During the method a second gate electrode material is selectively removed from a semiconductor structure from which the multi-gate transistor is formed, thereby exposing at least one surface of a first gate electrode material. The exposed surface of the first gate electrode material is deglazed. Subsequently, the first gate electrode material is removed. Other methods and devices are also disclosed.
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Cleavelin Cloves Rinn
Huffman Craig Henry
Xiong Weize
Brady III Wade J.
Chen Jack
Franz Warren L.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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