Multiple-gate MOS device and method for making the same

Details Multiple-gate MOS device and method for making the same Multiple-gate MOS device and method for making the same

2005-07-19

2005-07-19

Chaudhuri, Olik (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S588000

Reexamination Certificate

active

06919250

ABSTRACT:
A method for forming a semiconductor device with more than two gates involves the forming of a stack of n-conductive gate electrodes, where n>2. Silicon is formed around the gate stack and the silicon is doped to form source/drain regions. The multiple gates maximize the drive current for a given silicon area.

REFERENCES:
patent: 5308782 (1994-05-01), Mazure et al.
patent: 5372959 (1994-12-01), Chan
patent: 5583362 (1996-12-01), Maegawa
patent: 5965914 (1999-10-01), Miyamoto

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