Multiple gate field effect transistor structure

Details Multiple gate field effect transistor structure Multiple gate field effect transistor structure

2007-09-18

2007-09-18

Dang, Trung (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S283000, C438S284000

Reexamination Certificate

active

11057423

ABSTRACT:
A multiple gate region FET device for forming up to 6 FET devices and method for forming the same, the device including a multiple fin shaped structure comprising a semiconductor material disposed on a substrate; said multiple fin shaped structure comprising substantially parallel spaced apart sidewall portions, each of said sidewall portions comprising major inner and outer surfaces and an upper surface; wherein, each of said surfaces comprises a surface for forming an overlying field effect transistor (FET).

REFERENCES:
patent: 6562665 (2003-05-01), Yu
patent: 7037851 (2006-05-01), Gueneau de Mussy et al.
patent: 7071064 (2006-07-01), Doyle et al.
patent: 2004/0169239 (2004-09-01), Rim
patent: 2005/0145932 (2005-07-01), Park et al.
patent: 2005/0153486 (2005-07-01), Xiang et al.

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